IBM announces industry’s densest, fastest on-chip 32 nanometer dynamic memory

September 20th, 2009 at 6:17 PM  2 Comments

ibm-logoIBM has developed a prototype of what could become the industry’s smallest, densest, and fastest on-chip dynamic memory device, in the form of 32 nanometer silicon-on-insulator (SOI) technology, promising improvements in speed, power savings, and reliability for a wide range of products.

By insulating transistors against electrical leakage, IBM’s SOI technology is able to boast performance increases of up to 30 percent while reducing power consumption by 40 percent over conventional silicon technologies. This has allowed them to produce sample embedded dynamic random access memory (eDRAM) chips that have the smallest memory cell in the industry, while offering density, speed, and capacity surpassing that of conventional on-chip static random access memory (SRAM) in either 32 nanometer or 22 nanometer technologies, and closer to that of 15 nanometer SRAM technology. With latency and cycle times of less than 2 nanoseconds, IBM’s 32 nanometer SOI eDRAM is the fastest embedded memory announced to date.

Embedded memory is a critical part of the performance of many technologies, benefiting everything from multi-core processors to printers, network appliances, as well as many mobile and consumer devices. IBM plans to introduce its 32 nanometer SOI technology to many of its application-specific-integrated circuit (ASIC) and foundry clients, and will include the technology in future chips for its own servers.

“We are making this 32nm offering available to clients who are ready to benefit from the significant performance and power advantages of this seventh generation of IBM SOI technology,” said Gary Patton, vice president for IBM’s Semiconductor Research and Development Center. “The industry-leading, dense embedded memory, and our design library agreement with ARM, underscore our ability to provide clients with a market edge and a clear progression path to 32nm and 22nm SOI technology nodes.”

IBM engineers plan to describe the features of the 32nm and 22nm eDRAM at the International Electron Devices Meeting in December.